Materials innovation drives next-gen AI chips, enabling performance, efficiency and scalability.

Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving ...

Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking ...

Qualcomm and MediaTek were earlier supposed to be among the first brands to push 2nm smartphone chips into the market, but Samsung has quietly taken the crown by announcing Exynos 2600 — the world’s ...