TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

Sunnyvale, Calif. – The Electronic Device Group of Mitsubishi Electric & Electronics USA Inc. has introduced MOSFET-based RF transmitters for VHF, UHF and 800-MHz applications. The eight modules and ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile base stations to build smaller, more powerful and more ...

CEA-Leti and STMicroelectronics presented results at IEDM 2025 showcasing the key enablers for a new high-performance and versatile RF Si platform co-integrating best-in-class active and passive ...

Anton is the former Editor-in-Chief of Pocketnow.com. As publication leader, he brought Pocketnow as close as possible to the audience throughout the years, while leading a team of enthusiastic ...

Packaging innovation has always been critical to the cooling of components, especially for power-switching devices such as MOSFETs and IGBTs. The non-stop demand to make these devices smaller and ...

Qualcomm is sampling 5G NR mmWave and sub-6GHz RF modules for mobile devices. The Qualcomm QTM052 mmWave antenna module family and the Qualcomm QPM56xx sub-6 GHz RF module family pair with the ...

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.