At the VLSI Symposium being held this week in Kyoto, Japan, Renesas Technology Corp. announced it has developed what it calls an “extremely high-performance transistor technology” with low-cost ...

Intel announces a major technical breakthrough and historic innovation in microprocessors: the world's first 3-D transistors, called Tri-Gate, in a production technology. The transition to 3-D ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

The transistor laser, invented by scientists at the University of Illinois at Urbana-Champaign, has been full of surprises. Researchers recently coaxed the device to reveal fundamental properties of ...

Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a ...

The structure it has invented is called Tri-Gate and will be first used in chips manufactured using the 22-nanometre process, nicknamed Ivy Bridge. Continuing along the path of Moore's Law would have ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

Characteristics of enhancement-mode (e-mode) GaN, such as positive temperature coefficient of RDS(ON) and a temperature-independent threshold voltage, make them excellent candidates for paralleling.

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...