Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as well as to decrease turn-off energy. In switching inductive loads, the turn-on ...

Diodes Incorporated has introduced the DLLFSD01x series of switching diodes, aimed at designers who require ultra-low leakage and super-fast switching speeds. The diodes are suited for used in LCD ...

This PIN diode rf switch is the ideal antenna switch for VHF and UHF and work with the PIN diodes which are special high frequency switching diodes with very low internal capacitance. The internal ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Nasdaq: DIOD) today announced the PI3WVR648GEAEX five-lane MIPI 2:1 switch, capable of switching physical layers that comply with either C-PHY or ...

Diodes Incorporated has announced the introduction of the AP22913, a 2A single-channel, slew-rate-controlled load switch with true reverse current blocking for high-side load-switching applications.

Diodes Incorporated has announced the PI3L2500 LAN multiplexer/demultiplexer, designed to enable port switching in corporate LANs at Ethernet signal speeds of 2.5/5 ...

CHICAGO--(BUSINESS WIRE)--Littelfuse, Inc., the global leader in circuit protection, has added a series of silicon Schottky devices designed for ultra-low forward voltage drop (V F) to its rapidly ...

Diodes Incorporated (NASDAQ:DIOD) is one of the 14 Small Publicly Traded Semiconductor Companies to Invest in Now. On September 17, Diodes Incorporated (NASDAQ:DIOD) announced a new product called the ...

Diodes has introduced the AP22913, a 2.0A single-channel, slew-rate-controlled load switch with true reverse current blocking (TRCB) for high-side load-switching applications. Single-channel high-side ...

Wilmington, Delaware, Aug. 06, 2024 (GLOBE NEWSWIRE) -- Allied Market Research published a report, titled, "PIN Diode Market by Type (RF PIN diode, PIN photodiode, PIN switch diode and Others), ...

A glass substrate was first cleaned with acetone, methanol and deionized water for 5 min each. A transparent ITO electrode was deposited onto the cleaned substrate using a DC sputtering system.