(Nanowerk News) Advanced materials, including two-dimensional or atomically thin materials just a few atoms thick, are essential for the future of microelectronics technology. Now a team at Los Alamos ...

Using a dual-cation substitution approach, researchers at Science Tokyo introduced ferromagnetism into bismuth ferrite, a well-known and promising multiferroic material for next-generation memory ...

BYD has been granted a patent for an electronic device housing featuring a frame and a multi-layered sealing layer. This sealing layer consists of sub-sealing layers with varying compositions and ...

Researchers simultaneously substituted calcium at the bismuth site and ruthenium or iridium at the iron site to suppress the cycloidal spin structure, enabling room-temperature weak ferromagnetism and ...