onsemi’s Sam Francis discusses the SiC EV adoption gap between Europe and China and how GaN and SiC are complementary in onsemi’s portfolio. In this interview from PCIM Europe 2026, Power Electronics ...
The new fab increases production capacity for power semiconductors serving AI, automotive, industrial, and renewable energy markets. Infineon Technologies has officially opened its Smart Power Fab in ...
How power conversion, energy management, and thermal design determine the performance of battery energy storage systems. A battery energy storage system (BESS) is usually described by its ...
The TDA5 automotive SoC delivers up to 1200 TOPS and 24 TOP/W performance without the need for liquid cooling. Texas Instruments’ new TDA5 automotive SoC achieves up to 1200 TOPS AI performance while ...
BMSes play a pivotal role in ensuring reliable and secure Li-ion batteries. Despite the widespread use of lithium-ion batteries (Li-ion batteries), there remains a crucial need for accurate modeling ...
Interference-free data communication and personal safety are two major challenges for electronics in typical industrial environments. Within industrial environments, there are numerous cases where ...
One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...
APEC has been a cornerstone of the power electronics industry since its inception. This year’s conference marked the 40th anniversary of APEC, which has grown significantly since its founding in 1986, ...
Wide bandgap materials such as gallium nitride (GaN) are emerging as the technology to take electronic performance to the next level. GaN-based electronic components offer a number of important ...
In this episode of PEN’s Power Corner, Cédric Malaquin, Director and Analyst for RF Analog and Power at TechInsights, draws on findings from the TechInsights 2026 Power Outlook to map the forces ...
GaN transistors are significantly faster and smaller than silicon MOSFETs. GaN switching devices are available in two different types. Silicon power MOSFETs have not kept pace with the evolutionary ...
Gallium nitride–based high-electron–mobility transistors (HEMTs) have been widely adopted in both consumer and industrial power conversion due to their many material and device advantages over legacy ...
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