Abstract: We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length (Lg) of 25 nm. Benefiting from ...
Chemical Engineering, Competence Centre for Catalysis, Chalmers University of Technology, Gothenburg SE-412 96, Sweden ...
State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing100190, P. R. China School of Chemical Engineering, University of Chinese ...
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