The 100 V Gen 2 TMBS rectifier modules from Vishay Intertechnology are fully insulated devices in a compact SOT-227 package ...
Abstract: A newly designed diode is proposed and demonstrated in action experimentally. The new device has successfully increased forward current without additional mask and increase of the area.
Abstract: GaN devices have superior performance over Sibased devices, and high voltage normally-off GaN HEMTs with cascode structure have been available for industry application as they can be easily ...
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