Abstract: A broadband and low-noise fundamental mixer module for operation in the 300-GHz band was developed based on an epi-layer-transferred Fermi-level managed barrier (FMB) diode on an SiC ...
Abstract: This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results