Abstract: We demonstrate an acousto-optic modulation device based on an AlScN – SiO2 − SOI platform, achieving a π-phase voltage of 33V and a voltage-length product of 0.66 V ⋅ cm.
Abstract: We proposed a simplified and cost-effective optical-to-THz access architecture through cross-gain modulation in a semiconductor optical amplifier, and successfully demonstrated 1 Gbit/s ...
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