DATAQUEST

Chinese semiconductor research achieves multiple breakthroughs in memory and IC design

In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...
AZ Central

EPC2366 eGaN® FET Wins EPDT 2025 Product of the Year Award

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...
Electronic Design

DC-Link Caps Promise 200,000-Hour Lifetime at 105°C

COC blend dielectric rated 25°C higher than standard film capacitors, enabling more compact DC-link designs for ...
IEEE

Intrinsic speed limit of negative capacitance transistors

Abstract: The emergence of negative capacitance as a way to limit power dissipation in CMOS logic transistors has raised the question of response delay of ferroelectric negative capacitance. Latency ...
IEEE

Opportunities in 3-D stacked CMOS transistors

Abstract: 3-D stacked CMOS transistors offer an opportunity to enable further standard cell and SRAM scaling, making them a promising transistor architecture to extend Moore's law. We review ...
C&EN

Wettability Control of Interfaces for High-Performance Organic Thin-Film Transistors by Soluble Insulating Polymer Films

Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key ...