onsemi’s Sam Francis discusses the SiC EV adoption gap between Europe and China and how GaN and SiC are complementary in onsemi’s portfolio. In this interview from PCIM Europe 2026, Power Electronics ...
In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...
CooliBlade’s patented NEOcore thermal management solution achieves up to 1,000 times higher thermal conductivity than aluminum. As modern power electronics become more compact and powerful, they face ...
Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...
ADI’s TMC ROS1 driver facilitates seamless communication between the underlying TMC driver layer and the application layer within an ROS-managed system. The Robot Operating System (ROS) is robotics ...
The TDA5 automotive SoC delivers up to 1200 TOPS and 24 TOP/W performance without the need for liquid cooling. Texas Instruments’ new TDA5 automotive SoC achieves up to 1200 TOPS AI performance while ...
Wide bandgap materials such as gallium nitride (GaN) are emerging as the technology to take electronic performance to the next level. GaN-based electronic components offer a number of important ...
BMSes play a pivotal role in ensuring reliable and secure Li-ion batteries. Despite the widespread use of lithium-ion batteries (Li-ion batteries), there remains a crucial need for accurate modeling ...
Gallium nitride–based high-electron–mobility transistors (HEMTs) have been widely adopted in both consumer and industrial power conversion due to their many material and device advantages over legacy ...
APEC has been a cornerstone of the power electronics industry since its inception. This year’s conference marked the 40th anniversary of APEC, which has grown significantly since its founding in 1986, ...
A novel application from Innoscience for a BMS uses a GaN HEMT that is designed and configured as a bidirectional device. Bidirectional switches (BDSes) have many different applications. One example ...
Exploring the benefits of GaN HEMTs in the various joints of humanoid robotics, including wrist/elbow/ankle and hip/knee/shoulder. Once considered to be under the realm of science fiction, humanoid ...
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