C&EN

Polarized Tunneling Transistor for Ultrafast Memory

School of Integrated Circuits & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China Institute of Marine Science and Technology, ...
IEEE

Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors

Abstract: Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an upper transistor in monolithic three-dimensional devices. Although the field-effect transistors (FETs) ...
Science Daily

Scientists say quantum tech has reached its transistor moment

Quantum technology has reached a turning point, echoing the early days of modern computing. Researchers say functional quantum systems now exist, but scaling them into truly powerful machines will ...
IEEE

Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Abstract: Ferroelectric vertical gate-all-around field-effect-transistor (Fe-VGAAFET) suits a memory cell with a 5 nm technology node and beyond since it is less constrained by gate length, thereby ...