Abstract: This study designed a type of silicon carbide (SiC) split-gate MOSFETs (SG-MOSFETs) to evaluate the effect of SG structure on single-event gate oxide damage under heavy-ion irradiation.
A version of this article first appeared in CNBC's Healthy Returns newsletter, which brings the latest health-care news straight to your inbox. Subscribe here to receive future editions. After the ...
This striking satellite photo shows rippling ribbons of ethereal ice swirling like turbulent clouds on the surface of Lake Michigan, alongside a snow-covered Chicago. The wintery scene occurred during ...