Angstrom-scale plasmonic gap boosts nonlinear light output by 2,000% per volt

Researchers at the Institute for Molecular Science (NINS, Japan) and SOKENDAI have demonstrated a more than 2000% voltage-induced enhancement of near-field nonlinear optical responses. To achieve this ...
IEEE

An ANN-Based GaN HEMT Large-Signal Model With High Near-Threshold Accuracy and Its Application in Class-AB MMIC PA Design

Abstract: Artificial neural network-based gallium nitride high-electron-mobility transistor (ANN-based GaN HEMT) models have garnered significant attention due to their high accuracy, low development ...
IEEE

Hydrogel-Based Bipolar Synaptic Device for Artificial Neural Networks

Abstract: We present a bipolar synaptic device based on PAA/PMMA hydrogel. Bidirectional weight modulation, including multilevel positive and negative weights, is realizes within a single device, ...