Mouser Electronics, Inc. announced the availability of Cypress’ parallel FRAM non-volatile memory featuring advanced high-reliability ferroelectric process and superior to battery-backed SRAM modules.

Systems often need some form of non-volatile RAM to protect against memory losses caused by system power interruption or loss. Battery-backed RAM has been the most common form of high-density ...

Wolfgang Gruener writes that newly patented non-volatile memory DIMM technology could spark an IT revolution. These patents describe a form of non-volatile RAM, or NVRAM, which is nothing spectacular ...

Even as a mature, diverse and reliable technology—magnetic spinning disk drives (aka hard disk drives or “HDDs”) continue to grow in capacity, performance and cost benefits. Alternative storage ...

What is PCMO ReRAM? Difference between filamentary and PCMO ReRAM. Why tunable persistence is important. The idea of non-volatile, resistive RAM (ReRAM) has been around for a while. Its aim is to ...

New chip making techniques, faster SSD storage, and the use of AI and machine learning are some of the latest innovations helping increase the performance and efficiency of modern computers, and now a ...

Most applications that require a microcontroller also require somemechanism to store settings that will be remembered even when power isremoved. For example, a radio that forgets its station presets ...

A new technical paper titled “NVLeak: Off-Chip Side-Channel Attacks via Non-Volatile Memory Systems” was written (preprint) by researchers at UC San Diego, UT Austin, and Purdue University. “We study ...

GlobalFoundries (GF) has announced the acquisition of Renesas Electronics' proprietary and production-proven conductive bridging random access memory (CBRAM) technology, a low-power memory solution ...

A new type of universal computer memory - ULTRARAM™ - has taken a step closer towards development with a successful experiment. 'Universal memory' is a memory where the data is robustly stored, but ...

For decades, the goal has been to create a random access memory (RAM) that is non-volatile like flash storage but retains the speed and addressability of a RAM chip. Such technology changes the way ...

Scientists have experimentally demonstrated that polycrystalline alloyed-fused films of hafnium and zirconium oxides with a thickness of just 2.5 nm retain their ferroelectric properties MOSCOW, April ...