Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

The transition to the 2nm technology node introduces unprecedented challenges in Automated Test Equipment (ATE) bring-up and manufacturability. As semiconductor devices scale down, the complexity of ...

What many engineers once saw as a flaw in organic electronics could actually make these devices more stable and reliable, according to new research. (Nanowerk News) A paper to be presented at the IEEE ...

As computing demands grow, driven by artificial intelligence and the internet of things, the need for energy-efficient electronics becomes critical. At the heart of this evolution are transistors, the ...

A team advances transistor performance through perovskite-cation incorporation. In the movie Avengers, superheroes such as Iron Man, Captain America, Hulk, and Thor each contribute their unique ...

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...

(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...

Engineers have developed p-channel transistors through halide anion engineering. The new technology realizes a threshold voltage of 0 V and is hysteresis-free and high performing. Robot vacuums, a ...

What many engineers once saw as a flaw in organic electronics could actually make these devices more stable and reliable, according to new research from the University of Surrey and JOANNEUM RESEARCH ...